Nitrogen-oxygen complexes in Czochralski-silicon
✍ Scribed by P. Wagner; R. Oeder; W. Zulehner
- Book ID
- 104841311
- Publisher
- Springer
- Year
- 1988
- Tongue
- English
- Weight
- 353 KB
- Volume
- 46
- Category
- Article
- ISSN
- 1432-0630
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The electrical activity of nitrogen±oxygen (N±O) complexes in nitrogen-doped Czochralski (NCZ) silicon treated by hydrogen plasma was investigated. It was observed that in the hydrogenated NCZ samples the absorption line intensity of m-N±O (N±O complexes inducing middle infrared absorption lines) de
The influence of dislocations on nitrogen±oxygen (N±O) complexes in nitrogen-doped Czochralski (NCZ) silicon was investigated. It was found that N±O complexes were generated during annealing at 650 C for 10 min. In the early stage of annealing the amount of the N±O complexes in NCZ silicon with disl