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Nitride Semiconductor Devices: Principles and Simulation || AlGaN/GaN High Electron Mobility Transistors

✍ Scribed by Piprek, Joachim


Book ID
120060566
Publisher
Wiley-VCH Verlag GmbH & Co. KGaA
Year
2007
Weight
443 KB
Category
Article
ISBN
3527406670

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πŸ“œ SIMILAR VOLUMES


Studies on electron beam evaporated ZrO2
✍ Balachander, Krishnan ;Arulkumaran, Subramaniam ;Ishikawa, Hiroyasu ;Baskar, Kri πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 249 KB

## Abstract Metal–oxide–semiconductor high‐electron‐mobility transistors were demonstrated on AlGaN/GaN with electron beam (EB) evaporated ZrO~2~. The composition of the EB deposited ZrO~2~ thin films was confirmed using X‐ray photoelectron spectroscopy (XPS). The fabricated ZrO~2~‐based MOSHEMTs e