𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Ni Precursor for Chemical Vapor Deposition of NiSi

✍ Scribed by Ishikawa, Masato; Kada, Takeshi; Machida, Hideaki; Ohshita, Yoshio; Ogura, Atsushi

Book ID
126088074
Publisher
Institute of Pure and Applied Physics
Year
2004
Tongue
English
Weight
417 KB
Volume
43
Category
Article
ISSN
0021-4922

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

New molecular compound precursor for alu
New molecular compound precursor for aluminum chemical vapor deposition
✍ Tsutomu Shinzawa; Fumihiko Uesugi; Iwao Nishiyama; Kazumi Sugai; Shunji Kishida; πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 192 KB

A new type of precursor for aluminum chemical vapor deposition (Al-CVD) has been developed by mixing dimethylaluminum hydride (DMAH) and trimethylaluminum (TMA). The new precursor has proven itself to be effective for Al-CVD, where a good selectivity between the Si and the SiO 2 mask, a 3.0 mV cm re