New molecular compound precursor for alu
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Tsutomu Shinzawa; Fumihiko Uesugi; Iwao Nishiyama; Kazumi Sugai; Shunji Kishida;
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Article
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2000
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John Wiley and Sons
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English
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A new type of precursor for aluminum chemical vapor deposition (Al-CVD) has been developed by mixing dimethylaluminum hydride (DMAH) and trimethylaluminum (TMA). The new precursor has proven itself to be effective for Al-CVD, where a good selectivity between the Si and the SiO 2 mask, a 3.0 mV cm re