New molecular compound precursor for aluminum chemical vapor deposition

✍ Scribed by Tsutomu Shinzawa; Fumihiko Uesugi; Iwao Nishiyama; Kazumi Sugai; Shunji Kishida; Hidekazu Okabayashi

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 192 KB
• Volume: 14
• Category: Article
• ISSN: 0268-2605
• DOI: 10.1002/(sici)1099-0739(200001)14:1<14::aid-aoc936>3.0.co;2-j

✦ Synopsis

A new type of precursor for aluminum chemical vapor deposition (Al-CVD) has been developed by mixing dimethylaluminum hydride (DMAH) and trimethylaluminum (TMA). The new precursor has proven itself to be effective for Al-CVD, where a good selectivity between the Si and the SiO 2 mask, a 3.0 mV cm resistivity and a pure Al film with low C and O contamination levels (under 100 ppm) were achieved. Quadrupole mass and infrared absorption analysis have shown that the precursor contains a new molecular compound, consisting of a DMAH monomer and a TMA monomer. The mixture has lower viscosity than DMAH and can be easily bubbled for a stable precursor vapor supply.