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A chemical reaction model for physical vapor deposition of compound semiconductor films

✍ Scribed by S. C. Jackson; B. N. Baron; R. E. Rocheleau; T. W. F. Russell

Publisher: American Institute of Chemical Engineers
Year: 1987
Tongue: English
Weight: 997 KB
Volume: 33
Category: Article
ISSN: 0001-1541
DOI: 10.1002/aic.690330503

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cm 3 in comparison to 1.8 g/cm 3 obtained for SiBCN 3 synthesized by polymer pyrolysis. High hardness values up to 22 GPa are found, which might be further increased by reducing the residual hydrogen content by applying higher bias potentials or by reduced precursor flow. ## Experimental The expe