Reaction analysis of the formation of CuInSe2 films in a physical vapor deposition reactor

✍ Scribed by N. Orbey; G. Norsworthy; R. W. Birkmire; T. W. F. Russell

• Publisher: John Wiley and Sons
• Year: 1998
• Tongue: English
• Weight: 179 KB
• Volume: 6
• Category: Article
• ISSN: 1062-7995
• DOI: 10.1002/(sici)1099-159x(199803/04)6:2<79::aid-pip203>3.0.co;2-n

✦ Synopsis

The reaction kinetics for the formation of CuInSe 2 ®lms by reacting Cu/In layers with elemental selenium are compared with those for H 2 Se. The species mole fractions as a function of time in a single Se-source physical vapor deposition (PVD) reactor are found to be essentially the same as those obtained in a chemical vapor deposition (CVD) reactor with ¯owing H 2 Se, indicating that the same chemical equation representation can be used in both cases. The chemical engineering reaction analysis model developed previously by us is shown to predict adequately the experimental data in both reactors. The model is employed to predict three-source behavior. The eects of rate of species delivery and substrate temperature on the time to make CuInSe 2 is presented quantitatively.