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New technique for measuring the threshold voltage in MOS devices

โœ Scribed by A. Benfdila; A. Chikouche; M.S. Khanniche

Book ID
108411203
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
76 KB
Volume
60
Category
Article
ISSN
0167-9317

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๐Ÿ“œ SIMILAR VOLUMES

An alternative method for measuring flat
An alternative method for measuring flatband voltage in MOS devices
โœ A Benfdila; A Chikouche ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 102 KB

The present paper describes an experimental method that can be used to measure the flatband voltage value in MOS devices. The method is based on the detection of the non-steady-state / steady-state transition of the surface potential at the Si-SiO interface when it is pulsed by a voltage signal. Thi