Aluminium nitride thin รlms grown at room temperature on degenerate silicon (conducting) substrates have been studied using XPS. The hydrolysis layer at the surface of the AlN was examined using valence band measurements, and the e โ ect of 5 kV argon ion milling used to remove the hydrolysis layer w
โฆ LIBER โฆ
New depth-profiling method by angular-dependent X-ray photoelectron spectroscopy
โ Scribed by M. Pijolat; G. Hollinger
- Publisher
- Elsevier Science
- Year
- 1981
- Weight
- 68 KB
- Volume
- 105
- Category
- Article
- ISSN
- 0167-2584
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