Studies of the Si/SiO2 interface by angular dependent X-ray photoelectron spectroscopy
β Scribed by Finster, J. ;Schulze, D.
- Publisher
- John Wiley and Sons
- Year
- 1981
- Tongue
- English
- Weight
- 819 KB
- Volume
- 68
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
## Silicon with thermally-grown oxide overlayers m the thickness range IS-89 A IS studied by angulardcpendent XPS. Electron attenuation lengths at 1382 eV are found to be 37 +-4 A in SiOz and 27 +-6 A in Si. Single-crystal effects and thin-layer anomalies are also discussed.
Polyimides have been extensively studied in view of their wide industrial applications. Adhesion to a substrate is essential for normal operation of devices. This problem is often solved by the use of an adhesion promoter on the surface of interest. A surface-sensitive technique such as XPS has prov