𝔖 Bobbio Scriptorium
✦   LIBER   ✦

New approach to rapid characterization of single-crystalline silicon carbide

✍ Scribed by M. G. Mynbaeva

Book ID
111450602
Publisher
SP MAIK Nauka/Interperiodica
Year
2010
Tongue
English
Weight
188 KB
Volume
36
Category
Article
ISSN
1063-7850

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

CVD growth and characterization of singl
CVD growth and characterization of single-crystalline 6H silicon carbide
✍ S. Karmann; C. Haberstroh; F. Engelbrecht; W. Suttrop; A. SchΓΆner; M. Schadt; R. πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 352 KB

## Homoepitaxial growth of 6H-SiC layers is performed at 1600Β°C using propane and silane as source gases. The influence of the growth parameters, temperature and gas concentrations on the growth rate is discussed. The films are examined by structural, optical and electrical characterization techni

A Novel Approach to Silicon-Nanowire-Ass
A Novel Approach to Silicon-Nanowire-Assisted Growth of High-Purity, Single-Crystalline Ξ²-Si3N4 Nanowires
✍ J.-J. Niu; J.-N. Wang πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 789 KB

Bundles of single-crystalline b-Si 3 N 4 nanowires with high purity are successfully synthesized using a simple CVD process with silicon nanowire(SiNW)-assisted growth. The b-Si 3 N 4 NWs obtained have a small diameter of ∼30 nm, a single-crystalline structure with [100] or [101] direction, and a th