✍ Scribed by S. Karmann; C. Haberstroh; F. Engelbrecht; W. Suttrop; A. Schöner; M. Schadt; R. Helbig; G. Pensl; R.A. Stein; S. Leibenzeder
No coin nor oath required. For personal study only.
growth of 6H-SiC layers is performed at 1600°C using propane and silane as source gases. The influence of the growth parameters, temperature and gas concentrations on the growth rate is discussed. The films are examined by structural, optical and electrical characterization techniques. Unintentionally doped layers show donor concentrations of (N,, -N,) ~3 X lOI cm-'. An electron mobility of 370cm'/V s at room temperature and of almost 11000 cm'/V s is observed at T = 45 K.
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Under conditions of medium decomposition of MTS (10-90 X), a transition between region A (growth of nearly stoichiometric Sic) and region B (Siexcess Sic deposition) may be indueed by the variations of total flow rate, total pressure or temperature in relatively small intervals. After the modificati