𝔖 Bobbio Scriptorium
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1131. Growth, processing and characterization of beta-silicon carbide single crystals

Publisher
Elsevier Science
Year
1968
Tongue
English
Weight
136 KB
Volume
18
Category
Article
ISSN
0042-207X

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## Homoepitaxial growth of 6H-SiC layers is performed at 1600Β°C using propane and silane as source gases. The influence of the growth parameters, temperature and gas concentrations on the growth rate is discussed. The films are examined by structural, optical and electrical characterization techni