A study of the transition between growth of stoichiometric and silicon-excess silicon carbide by CVD in the system MTS/H2

✍ Scribed by Dr. Andrei Josiek; Dr. Francis Langlais; Dr. Xavier Bourrat

• Publisher: John Wiley and Sons
• Year: 1996
• Tongue: English
• Weight: 889 KB
• Volume: 2
• Category: Article
• ISSN: 0948-1907
• DOI: 10.1002/cvde.19960020105

✦ Synopsis

Under conditions of medium decomposition of MTS (10-90 X), a transition between region A (growth of nearly stoichiometric Sic) and region B (Siexcess Sic deposition) may be indueed by the variations of total flow rate, total pressure or temperature in relatively small intervals. After the modification of one of these parameters, the growtb rate reaches rapidly a new stationary value unless the modification leads to a transition from B to A. In this case, the growth rate increases during a transient stage before reaching the steady-state mode. A growth model is presented which explains these observations. A TEM study con6rms a prediction of this model.