Kinetics of CVD of stoichiometric and Si-excess SiC in the system MTS/H2 at medium decomposition of MTS

A study of the transition between growth

A study of the transition between growth of stoichiometric and silicon-excess silicon carbide by CVD in the system MTS/H2

✍ Dr. Andrei Josiek; Dr. Francis Langlais; Dr. Xavier Bourrat 📂 Article 📅 1996 🏛 John Wiley and Sons 🌐 English ⚖ 889 KB

Under conditions of medium decomposition of MTS (10-90 X), a transition between region A (growth of nearly stoichiometric Sic) and region B (Siexcess Sic deposition) may be indueed by the variations of total flow rate, total pressure or temperature in relatively small intervals. After the modificati