A Novel Approach to Silicon-Nanowire-Assisted Growth of High-Purity, Single-Crystalline β-Si3N4 Nanowires
✍ Scribed by J.-J. Niu; J.-N. Wang
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 789 KB
- Volume
- 13
- Category
- Article
- ISSN
- 0948-1907
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✦ Synopsis
Bundles of single-crystalline b-Si 3 N 4 nanowires with high purity are successfully synthesized using a simple CVD process with silicon nanowire(SiNW)-assisted growth. The b-Si 3 N 4 NWs obtained have a small diameter of ∼30 nm, a single-crystalline structure with [100] or [101] direction, and a thin oxide shell. The photoluminescence and Raman scattering spectra confirm the good crystalline structure. The weak blue-shift of the peaks in Raman scattering compared to bulk b-Si 3 N 4 is attributed to the phonon confinement effect or laser heating during the measurements. Finally, a possible SiNWs template-assisted growth model is suggested.