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Negative oxygen vacancies in HfO[sub 2] as charge traps in high-k stacks

✍ Scribed by Gavartin, J. L.; Muñoz Ramo, D.; Shluger, A. L.; Bersuker, G.; Lee, B. H.


Book ID
120369435
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
443 KB
Volume
89
Category
Article
ISSN
0003-6951

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The charge trapping and positive bias temperature instability (PBTI) are investigated at different post deposition annealing conditions (PDA) in HfO 2 nMOSFET. Pulse based measurements (Pulsed Id-Vg and "Pulse on the fly") are performed to characterize charge trapping effect. Compared with NH 3 PDA,