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Investigation of voltage dependent relaxation, charge trapping, and stress induced leakage current effects in HfO[sub 2]∕Dy[sub 2]O[sub 3] gate stacks grown on Ge (100) substrates

✍ Scribed by Rahman, M. S.; Evangelou, E. K.; Androulidakis, I. I.; Dimoulas, A.; Mavrou, G.; Tsipas, P.


Book ID
121721107
Publisher
AVS (American Vacuum Society)
Year
2009
Tongue
English
Weight
471 KB
Volume
27
Category
Article
ISSN
0734-211X

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