Oxygen vacancy induced charge trapping and positive bias temperature instability in HfO2nMOSFET
✍ Scribed by Minseok Jo; Hokyung Park; Man Chang; Hyung-Suk Jung; Jong-Ho Lee; Hyunsang Hwang
- Book ID
- 104051723
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 425 KB
- Volume
- 84
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
The charge trapping and positive bias temperature instability (PBTI) are investigated at different post deposition annealing conditions (PDA) in HfO 2 nMOSFET. Pulse based measurements (Pulsed Id-Vg and "Pulse on the fly") are performed to characterize charge trapping effect. Compared with NH 3 PDA, the NH 3 +O 2 PDA shows significant reduction of charge trap sites in HfO 2 , which causes the improvement of device performance and reliability. The significant improvement after additional annealing can be explained by the passivation of oxygen vacancies in HfO 2 .