✦ LIBER ✦

Band alignments and defect levels in SiâHfO[sub 2] gate stacks: Oxygen vacancy and Fermi-level pinning

✍ Scribed by Broqvist, Peter; Alkauskas, Audrius; Pasquarello, Alfredo

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Interfacial oxygen and nitrogen induced

✍ Hinkle, C. L.; Galatage, R. V.; Chapman, R. A.; Vogel, E. M.; Alshareef, H. N.; 📂 Article 📅 2010 🏛 American Institute of Physics 🌐 English ⚖ 478 KB

Band alignments and defect levels in SiâHfO[sub 2] gate stacks: Oxygen vacancy and Fermi-level pinning