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Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO[sub 2] gate stacks

✍ Scribed by Hinkle, C. L.; Galatage, R. V.; Chapman, R. A.; Vogel, E. M.; Alshareef, H. N.; Freeman, C.; Wimmer, E.; Niimi, H.; Li-Fatou, A.; Shaw, J. B.


Book ID
121476647
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
478 KB
Volume
96
Category
Article
ISSN
0003-6951

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