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Nature of the filament formed in HfO2-based resistive random access memory

✍ Scribed by De Stefano, Francesca; Houssa, Michel; Afanas'ev, Valeri V.; Kittl, Jorge A.; Jurczak, Małgorzata; Stesmans, Andre

Book ID: 120710613
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 455 KB
Volume: 533
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2012.12.097

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