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Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories

✍ Scribed by De Stefano, F.; Houssa, M.; Kittl, J. A.; Jurczak, M.; Afanasâev, V. V.; Stesmans, A.

Book ID: 120395289
Publisher: American Institute of Physics
Year: 2012
Tongue: English
Weight: 601 KB
Volume: 100
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3696672

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