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Ultrafast progressive breakdown associated with metal-like filament formation of a breakdown path in a HfO[sub 2]∕TaN∕TiN transistor

✍ Scribed by R. Ranjan; K. L. Pey; C. H. Tung; D. S. Ang; L. J. Tang; T. Kauerauf; R. Degraeve; G. Groeseneken; S. De Gendt; L. K. Bera


Book ID
125846784
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
769 KB
Volume
88
Category
Article
ISSN
0003-6951

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