✦ LIBER ✦
Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories
✍ Scribed by Sharath, S. U.; Kurian, J.; Komissinskiy, P.; Hildebrandt, E.; Bertaud, T.; Walczyk, C.; Calka, P.; Schroeder, T.; Alff, L.
- Book ID
- 126845075
- Publisher
- American Institute of Physics
- Year
- 2014
- Tongue
- English
- Weight
- 637 KB
- Volume
- 105
- Category
- Article
- ISSN
- 0003-6951
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