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Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices

✍ Scribed by Zazpe, Raúl ;Ungureanu, Mariana ;Golmar, Federico ;Stoliar, Pablo ;Llopis, Roger ;Casanova, Fèlix ;Pickup, David F. ;Rogero, Celia ;Hueso, Luis E.


Book ID
121370771
Publisher
The Royal Society of Chemistry
Year
2014
Tongue
English
Weight
900 KB
Volume
2
Category
Article
ISSN
2050-7526

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