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Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters

✍ Scribed by Chang, Y. C.; Huang, M. L.; Lee, K. Y.; Lee, Y. J.; Lin, T. D.; Hong, M.; Kwo, J.; Lay, T. S.; Liao, C. C.; Cheng, K. Y.

Book ID: 117998588
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 635 KB
Volume: 92
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2883967

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