Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniques

✍ Scribed by D. Zade; K. Kakushima; T. Kanda; Y.C. Lin; P. Ahmet; K. Tsutsui; A. Nishiyama; N. Sugii; E.Y. Chang; K. Natori; T. Hattori; H. Iwai

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 586 KB
• Volume: 88
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2011.03.068