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Energy barriers at interfaces between (100) InxGa1-xAs(0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2

✍ Scribed by Afanasev, V. V.; Stesmans, A.; Brammertz, G.; Delabie, A.; Sionke, S.; OMahony, A.; Povey, I. M.; Pemble, M. E.; OConnor, E.; Hurley, P. K.; Newcomb, S. B.

Book ID: 118123559
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 666 KB
Volume: 94
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3137187

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