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Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As

✍ Scribed by Chiu, H. C.; Tung, L. T.; Chang, Y. H.; Lee, Y. J.; Chang, C. C.; Kwo, J.; Hong, M.

Book ID: 118123558
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 658 KB
Volume: 93
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3027476

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