Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory

✍ Scribed by Cabout, T.; Buckley, J.; Cagli, C.; Jousseaume, V.; Nodin, J.-F.; de Salvo, B.; Bocquet, M.; Muller, Ch.

• Book ID: 120339317
• Publisher: Elsevier Science
• Year: 2013
• Tongue: English
• Weight: 434 KB
• Volume: 533
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/j.tsf.2012.11.050