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Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO 2 Resistive Material Depending on the Thickness of Ti

✍ Scribed by Kim, Sook Joo; Sung, Min Gyu; Joo, Moon Sig; Kim, Wan Gee; Kim, Ja Yong; Yoo, Jong Hee; Kim, Jung Nam; Gyun, Byun Ggu; Byun, Jun Young; Roh, Jae Sung; Park, Sung Ki; Kim, Yong Soo

Book ID: 120382433
Publisher: Institute of Pure and Applied Physics
Year: 2011
Tongue: English
Weight: 726 KB
Volume: 50
Category: Article
ISSN: 0021-4922
DOI: 10.1143/JJAP.50.04DD14

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