The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device

✍ Scribed by Kou-Chen Liu; Wen-Hsien Tzeng; Kow-Ming Chang; Yi-Chun Chan; Chun-Chih Kuo; Chun-Wen Cheng

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 613 KB
• Volume: 50
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/j.microrel.2010.02.006

✦ Synopsis

We successfully fabricated the Gd 2 O 3 film for the application of resistive random access memory (RRAM). The resistive switching behavior of the Ti/Gd 2 O 3 /Pt capacitor structure could be both operated under positive or negative bias. However, there was a significant difference on the switching properties. The switching behavior under positive bias operation was more stable, had less voltage and resistance fluctuation, and had longer endurance than that of the negative one. We propose that the anode electrode plays an important role in the switching characteristics and may be the cause of the asymmetry of the I-V curves between positive and negative operation.