We successfully fabricated the Gd 2 O 3 film for the application of resistive random access memory (RRAM). The resistive switching behavior of the Ti/Gd 2 O 3 /Pt capacitor structure could be both operated under positive or negative bias. However, there was a significant difference on the switching
β¦ LIBER β¦
Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
β Scribed by Chih-Yang Lin; Dai-Ying Lee; Sheng-Yi Wang; Chun-Chieh Lin; Tseung-Yuen Tseng
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 713 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0257-8972
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