𝔖 Bobbio Scriptorium

✦ LIBER ✦

Nature of defects in silicon implanted with boron ions: T P Timasheca et al, Struct Defects in Semicon, Coll, Novosibirsk 1973, 274–277 (in Russian)

Publisher: Elsevier Science
Year: 1975
Tongue: English
Weight: 162 KB
Volume: 25
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(75)91461-x

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📜 SIMILAR VOLUMES

Investigation of defects in ion-implante

Investigation of defects in ion-implanted silicon by electrochemical methods: P V Pavlov et al, Struct Defects in Semicon, Coll, Novosibirsk 1973, 251–254 (in Russian)

📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 162 KB

Investigation of radiation defects in si

Investigation of radiation defects in silicon and silicon oxide generated on ion implantation: I Gyulay et al, Struct Defects in Semicon, Coll, Novosibirsk 1973, 273 (in Russian)

📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 139 KB

Structural transformations in diamond at

Structural transformations in diamond at ion implantation: V S Vavilov et al, Struct Defects in Semicon, Coll, Novosibirsk 1973, 231–234 (in Russian)

📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 162 KB

Nature of dislocation loops, induced in

Nature of dislocation loops, induced in silicon during the process of phosphorus ion implantation and subsequent annealing: S K Maksimov et al, Struct Defects in Semicon, Coll, Novosibirsk 1973, 227–230 (in Russian)

📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 162 KB

On the mechanism of amorphization of cry

On the mechanism of amorphization of crystals at ion bombardment: N N Gerasimenko et al, Struct Defects in Semicon, Coll, Novosibirsk 1973, 223–226 (in Russian)

📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 139 KB

The influence of defects produced by ion

The influence of defects produced by ion bombardment on distribution and electrical activity of impurity atoms: V M Zelexvinskaya et al, Struct Defects in Semicon, Coll, Novosibirsk 1973, 235–238 (in Russian)

📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 162 KB