Nanocrystalline γ-Al2O3thin film deposited by magnetron sputtering (MS) at low temperature
✍ Scribed by Adele Carradò; Mohamed A. Taha; Nahed A. El-Mahallawy
- Book ID
- 107562259
- Publisher
- Springer US
- Year
- 2009
- Tongue
- English
- Weight
- 373 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1935-3804
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📜 SIMILAR VOLUMES
## Abstract Hexagonal aluminium nitride (AlN) and zinc oxide (ZnO) thin films have been deposited by DC and RF reactive magnetron sputtering at room temperature. For a first set of samples, sputtered AlN films were deposited on silicon ZnO substrate. For a second set, ZnO films were deposited on Al
Yttrium oxide thin film deposition by atomic layer epitaxy (ALE) was studied at 200±425 C using Y(thd) 3 , Y(thd) 3 (bipyridyl), or Y(thd) 3 (1,10-phenanthroline) (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) as an yttrium precursor, and ozone as an oxygen source. All yttrium precursors were analyzed