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Nano-indentation fracture test of Pb(Zr0.52Ti0.48)O3 ferroelectric thin films

✍ Scribed by X.J. Zheng; Y.C. Zhou; J.Y. Li


Book ID
108492011
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
341 KB
Volume
51
Category
Article
ISSN
1359-6454

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The ferroelectric random access memory (FRAM) which uses ferroelectric thin film as memory material is considered to be a candidate for the next generation memory application. In this work, we apply nanoembossing technology to fabricate Pb(Zr 0.3 ,Ti 0.7 )O 3 (PZT) ferroelectric thin film nanostruct