Influences of embossing technology on Pb(Zr0.3,Ti0.7)O3 ferroelectric thin film

✍ Scribed by Zhen-Kui Shen; Zhi-Hui Chen; Zhi-Jun Qiu; Bing-rui Lu; Jing Wan; Shao-Ren Deng; An-Quan Jiang; Xin-Ping Qu; Ran Liu; Yifang Chen

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 456 KB
• Volume: 87
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2009.12.049

✦ Synopsis

The ferroelectric random access memory (FRAM) which uses ferroelectric thin film as memory material is considered to be a candidate for the next generation memory application. In this work, we apply nanoembossing technology to fabricate Pb(Zr 0.3 ,Ti 0.7 )O 3 (PZT) ferroelectric thin film nanostructures and investigate the influence of the patterning process on the material and ferroelectric properties by using SEM, XRD and Precision Ferroelectric Tester. Embossing process has been optimized for embossing depth and pattern profile. It was found that embossing will result in (1 0 0) preferred orientation of the PZT thin film. The electrical characteristics of patterned and un-patterned PZT films have been also studied for comparison.