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Nanoscale control of domain arrangements in Pb(Zr0.3,Ti0.7)O3 ferroelectric films

โœ Scribed by Zhen-Kui Shen; Qian Lu; Zhi-Hui Chen; An-Quan Jiang; Zhi-Jun Qiu; Xin-Ping Qu; Yi-Fang Chen; Ran Liu

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
851 KB
Volume
88
Category
Article
ISSN
0167-9317

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Influences of embossing technology on Pb(Zr0.3,Ti0.7)O3 ferroelectric thin film
โœ Zhen-Kui Shen; Zhi-Hui Chen; Zhi-Jun Qiu; Bing-rui Lu; Jing Wan; Shao-Ren Deng; ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 456 KB

The ferroelectric random access memory (FRAM) which uses ferroelectric thin film as memory material is considered to be a candidate for the next generation memory application. In this work, we apply nanoembossing technology to fabricate Pb(Zr 0.3 ,Ti 0.7 )O 3 (PZT) ferroelectric thin film nanostruct