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Fabrication of the hydrogen resistive ferroelectric film of the (Pb0.72La0.28)Ti0.93O3/Pb(Zr0.52Ti0.48)O3/(Pb0.72La0.28)Ti0.93O3 heterostructure by a pulsed laser deposition method

✍ Scribed by Eun Sun Lee; Dong Hua Li; Hyun Woo Chung; Sang Yeol Lee

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
156 KB
Volume
252
Category
Article
ISSN
0169-4332

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## Abstract The integration and the device realization of Pb(Zr, Ti)O~3~ (PZT) thick films on Si substrates are known to be extremely difficult because the processing temperature of the PZT thick film is close to the melting point of Si. However, PZT thick‐film devices on Si warrant attention as th