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Dynamic hysteresis of ferroelectric Pb(Zr0.52Ti0.48)O3 thin films

✍ Scribed by J.-M. Liu; L.C. Yu; G.L. Yuan; Y. Yang; H.L.W. Chan; Z.G. Liu


Book ID
108411276
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
200 KB
Volume
66
Category
Article
ISSN
0167-9317

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Influences of embossing technology on Pb
✍ Zhen-Kui Shen; Zhi-Hui Chen; Zhi-Jun Qiu; Bing-rui Lu; Jing Wan; Shao-Ren Deng; πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 456 KB

The ferroelectric random access memory (FRAM) which uses ferroelectric thin film as memory material is considered to be a candidate for the next generation memory application. In this work, we apply nanoembossing technology to fabricate Pb(Zr 0.3 ,Ti 0.7 )O 3 (PZT) ferroelectric thin film nanostruct