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Dopant compensation mechanism and leakage current in Pb(Zr0.52,Ti0.48)O3 thin films

✍ Scribed by C.K. Barlingay; S.K. Dey


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
433 KB
Volume
272
Category
Article
ISSN
0040-6090

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## Abstract The integration and the device realization of Pb(Zr, Ti)O~3~ (PZT) thick films on Si substrates are known to be extremely difficult because the processing temperature of the PZT thick film is close to the melting point of Si. However, PZT thick‐film devices on Si warrant attention as th