SiFz has been detected by resonance-enhanced multiphoton ionization mass spectrometry. Two new absorptions have been observed at 48 1.30 and 379.94 nm and assigned as the (3 + 1) photoionization via the B 'B, state and the ( I+ 3) absorption via the 8 'Bi state. A third absorption is observed betwee
MPI/MS detection of SiF and SiF2 radicals produced from the reaction of F2 and NF3 with silicon
โ Scribed by J.A. Dagata; D.W. Squire; C.S. Dulcey; D.S.Y. Hsu; M.C. Lin
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Weight
- 469 KB
- Volume
- 134
- Category
- Article
- ISSN
- 0009-2614
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โฆ Synopsis
SiF and SiF2 radicals, produced in the thermal reaction of Fz and NF:, with solid silicon, have been detected by multiphoton ionization mass spectrometry in the 438 and 321 nm wavelength regions, respectively. The reaction pathway to the production of SiF radicals is of minor significance compared with SiF2 production over a wide range of temperatures and pressures. In both cases it was found that little or no fragmentation of the parent ion occurs upon ionization. MPYMS is thus shown to be a useful diagnostic tool for studies of fluorine-silicon etching reactions.
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