SiF and SiF2 radicals, produced in the thermal reaction of Fz and NF:, with solid silicon, have been detected by multiphoton ionization mass spectrometry in the 438 and 321 nm wavelength regions, respectively. The reaction pathway to the production of SiF radicals is of minor significance compared w
REMPI/MS detection of SiF2 radicals by (3+1) and (1+3) photoionization
β Scribed by J.S. Horwitz; C.S. Dulcey; M.C. Lin
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 528 KB
- Volume
- 150
- Category
- Article
- ISSN
- 0009-2614
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β¦ Synopsis
SiFz has been detected by resonance-enhanced multiphoton ionization mass spectrometry. Two new absorptions have been observed at 48 1.30 and 379.94 nm and assigned as the (3 + 1) photoionization via the B 'B, state and the ( I+ 3) absorption via the 8 'Bi state. A third absorption is observed between 390 and 430 nm which cannot be assigned to any known electronic states of SiF*. Most likely, this is a (3 + 1) photoionization via a Rydberg state. SiF, radicals were produced by the reaction of SiF3H with F atoms and by the reaction of F, with heated silicon crystals under single gas-surface collision conditions.
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