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Morphology and semiconducting properties of homoepitaxially grown phosphorus-doped (1 0 0) and (1 1 1) diamond films by microwave plasma-assisted chemical vapor deposition using triethylphosphine as a dopant source

✍ Scribed by Takeyasu Saito; Masanori Kameta; Katsuki Kusakabe; Shigeharu Morooka; Hideaki Maeda; Yasunori Hayashi; Tanemasa Asano; Akihiko Kawahara

Book ID: 108342745
Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 548 KB
Volume: 191
Category: Article
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(98)00360-1

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Morphology and semiconducting properties of homoepitaxially grown phosphorus-doped (1&#xa0;0&#xa0;0) and (1&#xa0;1&#xa0;1) diamond films by microwave plasma-assisted chemical vapor deposition using triethylphosphine as a dopant source

Morphology and semiconducting properties of homoepitaxially grown phosphorus-doped (1 0 0) and (1 1 1) diamond films by microwave plasma-assisted chemical vapor deposition using triethylphosphine as a dopant source