The epitaxial growth of sexiphenyl (C 36 H 26 ) on an atomically clean aluminium (1 1 1) surface is studied on the basis of thin films grown at different substrate temperatures. Thin films with an average thickness of 350 A are investigated by X-ray diffraction techniques and atomic force microscop
Growth and characterization of P-doped CVD diamond (1 1 1) thin films homoepitaxially grown using trimethylphosphine
β Scribed by Hideki Wada; Tokuyuki Teraji; Toshimichi Ito
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 203 KB
- Volume
- 244
- Category
- Article
- ISSN
- 0169-4332
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