✦ LIBER ✦

Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O3 (1 0 0) thin films

✍ Scribed by Z.Z. Tang; S.J. Liu; R.K. Singh; S. Bandyopadhyay; I. Sus; T. Kotani; M van Schilfgaarde; N. Newman

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 988 KB
Volume: 57
Category: Article
ISSN: 1359-6454
DOI: 10.1016/j.actamat.2008.09.038

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✦ Synopsis

We have synthesized and characterized epitaxial and stoichiometric Ba(Zn 1/3 Ta 2/3 )O 3 (1 0 0) dielectric thin films grown on MgO (1 0 0) substrates by pulsed laser deposition. Advanced electronic structure calculations were used to guide the interpretation of the experimental data. Zn-enriched targets and high oxygen pressures were used to compensate for Zn loss during film growth. The Ba(Zn 1/3 Ta 2/3 )O 3 films had an indirect optical band gap of $3.0 eV and a refractive index of 1.91 in the visible spectral range. Zn-Ta B-site ordering was not observed in the Ba(Zn 1/3 Ta 2/3 )O 3 thin film X-ray diffraction data. A dielectric constant of 25 and dissipation factor of 0.0025 at 100 kHz were measured using the interdigital capacitor method. The Ba(Zn 1/3 Ta 2/3 )O 3 films exhibited a small thermally activated ohmic leakage current at high fields (<250 kV cm -1 ) and high temperatures (<200 °C) with an activation energy of 0.85 eV.

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Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O3 (1&#xa0;0&#xa0;0) thin films

✦ Synopsis

Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O3 (1 0 0) thin films