Reccnt studies on HEMT structures according to their growth orientation have attracted much interest from the viewpoint of physics and novel device applications. However, the optimization of their properties needs a high degree of crystalline quality. In this work, the structural characteristics of
✦ LIBER ✦
Morphological characterization of InAlAs/InAs and InAlAs/InGaAs multiple-quantum-well structures grown on InP substrates
✍ Scribed by F. Peiró; A. Cornet; J.R. Morante; S.A. Clark; R.H. Williams
- Book ID
- 119125022
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 849 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0167-577X
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Structural characterization of InGaAs/In
✍
A. Vilà; A. Cornet; J.R. Morante; A. Georgakilas; G. Halkias; N. Bélcourt
📂
Article
📅
1997
🏛
Elsevier Science
🌐
English
⚖ 238 KB
High-resolution X-ray diffraction of mol
✍
Brühl, H.-G. ;Poecker, A. ;Nickel, H. ;Lösch, R. ;Schlapp, W.
📂
Article
📅
1993
🏛
International Union of Crystallography
🌐
English
⚖ 469 KB
Metalorganic Vapor Phase Epitaxial Growt
✍
Sato, T.; Mitsuhara, M.; Kakitsuka, T.; Fujisawa, T.; Kondo, Y.
📂
Article
📅
2008
🏛
IEEE
🌐
English
⚖ 476 KB
Ordering of stacked InAs/GaAs quantum-wi
✍
Z.C. Lin; S.D. Lin; C.P. Lee
📂
Article
📅
2008
🏛
Elsevier Science
🌐
English
⚖ 510 KB
Stacked and wire-like InAs/GaAs nanostructures in InGaAs/InAlAs matrix on InP substrates were grown by molecular beam epitaxy (MBE) and investigated by atomic force microscope (AFM) and transmission electron microscope (TEM). Cross-sectional TEM images showed that the stacked InAs and GaAs quantum-w
Characterization of GaAsSb/InAlAs quantu
✍
Nakata, Yoshiaki; Sugiyama, Yoshihiro; Ueda, Osamu; Sasa, Shigehiko; Fujii, Tosh
📂
Article
📅
1990
🏛
Elsevier Science
🌐
English
⚖ 291 KB
Capacitance–voltage profile characterist
✍
M. Baira; R. Ajjel; H. Maaref; B. Salem; G. Brémond; M. Gendry; O. Marty
📂
Article
📅
2006
🏛
Elsevier Science
🌐
English
⚖ 139 KB