Capacitance–voltage profile characteristics of Schottky barrier structure with InAs quantum dots grown on InAlAs/InP(001)

✍ Scribed by M. Baira; R. Ajjel; H. Maaref; B. Salem; G. Brémond; M. Gendry; O. Marty

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 139 KB
• Volume: 26
• Category: Article
• ISSN: 0928-4931
• DOI: 10.1016/j.msec.2005.10.003