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Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia

✍ Scribed by Grandjean, N.; Massies, J.; Vennéguès, P.; Leroux, M.; Demangeot, F.; Renucci, M.; Frandon, J.


Book ID
119959086
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
942 KB
Volume
83
Category
Article
ISSN
0021-8979

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Growth and characterization of GaAs on s
✍ Alain C. Diebold; S. W. Steinhauser; R. P. Mariella Jr.; Jordi Marti; F. Reiding 📂 Article 📅 1990 🏛 John Wiley and Sons 🌐 English ⚖ 922 KB

## Abstract Crystal epilayers of (111)‐oriented GaAs have been grown successfully on sapphire (0001) substrates by molecular beam epitaxy. Although the epilayers were found to have a very high twin density, large areas (cm^2^) with no grain boundaries were observed. Both substrate surface preparati